Quantum dot devices with strain control

US11183564B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Nicole K. Thomas · Portland, US
• Ravi Pillarisetty · Portland, US
• Payam Amin · Portland, US
• Roza Kotlyar · Portland, US
• Patrick H. Keys · Portland, US
• Hubert C. George · Portland, US
• Kanwaljit Singh · Rotterdam, NL
• James S. Clarke · Portland, US
• David J. Michalak · Portland, US
• Lester Lampert · Portland, US
• Zachary R. Yoscovits · Beaverton, US
• Roman Caudillo · Portland, US
• Jeanette M. Roberts · North Plains, US

Key dates

• Filing date: Jun 21, 2018
• Grant date: Nov 23, 2021
• Expiry date: Mar 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer and a barrier layer; a first gate metal above the quantum well stack, wherein the barrier layer is between the first gate metal and the quantum well layer; and a second gate metal above the quantum well stack, wherein the barrier layer is between the second gate metal and the quantum well layer, and a material structure of the second gate metal is different from a material structure of the first gate metal.