Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
US11187972B2 · kind B2 · utility
1Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2017 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Aug 20, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.