Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film
US11189498B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | May 15, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | May 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.