Semiconductor device with graphene layer and method for forming the same

US11189622B1 · kind B1 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventor

• Cheng Yang · Shanghai, CN

Key dates

• Filing date: Jul 21, 2020
• Grant date: Nov 30, 2021
• Expiry date: Jul 21, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/488

Abstract

The present disclosure provides a semiconductor device with a graphene layer and a method for forming the same. The semiconductor device includes a first source/drain region and a second source/drain region disposed in a semiconductor substrate. The semiconductor device also includes a word line structure disposed in the semiconductor substrate and between the first source/drain region and the second source/drain region. The word line structure includes a gate dielectric layer, and a lower electrode layer disposed over the gate dielectric layer. The word line structure also includes an upper electrode layer disposed over the lower electrode layer, and a first graphene layer disposed between the lower electrode layer and the upper electrode layer.