Extreme ultraviolet mask absorber and processes for manufacture
US11194244B2 · kind B2 · utility
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17References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | May 15, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/062
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.