Healing method before transfer of a semiconducting layer
US11195711B2 · kind B2 · utility
1Cited by
2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 2, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jan 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.