Heterojunction bipolar transistors

US11195925B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Judson R. Holt · Wappingers Falls, US
• Vibhor Jain · Williston, US
• Qizhi Liu · South Burlington, US
• Ramsey Hazbun · Colchester, US
• Pernell Dongmo · South Burlington, US
• John J. Pekarik · Underhill, US
• Cameron E. Luce · Colchester, US

Key dates

• Filing date: Jan 2, 2020
• Grant date: Dec 7, 2021
• Expiry date: Jan 2, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the sub-collector region, the collector region composed of semiconductor material; an intrinsic base region composed of intrinsic base material surrounded by the semiconductor material above the collector region; and an emitter region above the intrinsic base region.