Pernell Dongmo
7Patents
1h-index
15Co-inventors
40Inventor score
Filing activity: Mar 29, 2017 → Nov 16, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10777668B2 | Bipolar junction transistors with a self-aligned emitter and base | Electricity | 4 | Active |
| US10720494B2 | Field-effect transistors with airgaps | Electricity | 1 | Active |
| US10818772B2 | Heterojunction bipolar transistors with an inverted crystalline boundary in the base layer | Electricity | 0 | Active |
| US12317562B2 | High electron mobility transistors having barrier liners and integration schemes | Electricity | 0 | Active |
| US11322639B2 | Avalanche photodiode | Electricity | 0 | Active |
| US10134880B2 | Self-aligned bipolar junction transistors with a base grown in a dielectric cavity | Electricity | 0 | Active |
| US11195925B2 | Heterojunction bipolar transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.