Semiconductor devices with backside power rail and methods of fabrication thereof
US11195930B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jul 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.