Method of forming a metal silicide transparent conductive electrode
US11195969B2 · kind B2 · utility
0Cited by
9References
12Claims
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Key dates
| Filing date | Aug 3, 2018 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Apr 19, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in a disorderly arrangement on a substrate. The metal silicide nanowire network can be formed by applying a solution that contains silicon nanowires onto the substrate, forming a metal layer on the silicon nanowires, and performing a silicidation anneal such that the metal silicide nanowires are fused together in a disorderly arrangement, forming a mesh. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.