Method of manufacture of a semiconductor device
US11201097B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2019 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Dec 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.