Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assemblies
US11201167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2019 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Dec 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.