Semiconductor device having rare earth oxide layer and method of manufacturing the same

US11201189B2 · kind B2 · utility

Assignee

• TOSHIBA MEMORY CORPORATION · JP

Inventors

• Youngmin EEH · Seongnam-si, KR
• Toshihiko Nagase · Sagamihara, JP
• Daisuke Watanabe · Chigasaki, JP
• Kazuya SAWADA · Seoul, KR
• Kenichi Yoshino · Yokohama, JP
• Tadaaki Oikawa · Nagano, JP
• Hiroyuki OHTORI · Yokkaichi, JP

Key dates

• Filing date: Sep 9, 2018
• Grant date: Dec 14, 2021
• Expiry date: Sep 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.