Backside contact structures and fabrication for metal on both sides of devices
US11201221B2 · kind B2 · utility
4Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Aug 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and a metal interconnect coupled to at least one of the plurality of devices from the second side of the device stratum. A method including forming a transistor device including a channel between a source region and a drain region and a gate electrode on the channel defining a first side of the device; and forming an interconnect to one of the source region and the drain region from a second side of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.