Electroplating seed layer buildup and repair
US11203816B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Oct 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of electroplating may include delivering a current from a power supply through a plating bath of an electroplating chamber for a first period of time. The current delivered may be or include a pulsed current at a duty cycle of less than or about 50%. The methods may include plating a first amount of metal on a substrate within the plating bath. The substrate may define a via within the substrate. The methods may include, subsequent the first period of time, transitioning the power supply to a continuous DC current delivery for a second period of time. The methods may include plating a second amount of metal on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.