Patent · US Active

Electroplating seed layer buildup and repair

US11203816B1 · kind B1 · utility

0Cited by
1References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 23, 2020
Grant dateDec 21, 2021
Priority date
Expiry dateOct 23, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76879
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Exemplary methods of electroplating may include delivering a current from a power supply through a plating bath of an electroplating chamber for a first period of time. The current delivered may be or include a pulsed current at a duty cycle of less than or about 50%. The methods may include plating a first amount of metal on a substrate within the plating bath. The substrate may define a via within the substrate. The methods may include, subsequent the first period of time, transitioning the power supply to a continuous DC current delivery for a second period of time. The methods may include plating a second amount of metal on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.