Memory devices and electronic systems having a hybrid cache including static and dynamic caches that may be selectively disabled based on cache workload or availability, and related methods
US11204696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2019 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7206
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices including a hybrid cache, methods of operating a memory device, and associated electronic systems including a memory device having a hybrid cache, are disclosed. The hybrid cache includes a dynamic cache that may include x-level cell (XLC) blocks of non-volatile memory cells, which may include multi-level cells (MLC), triple-level cells (TLC), quad-level cells (QLC), etc., shared between the dynamic cache and a main memory. The hybrid cache includes a static cache including single-level cell (SLC) blocks of non-volatile memory cells. The memory device further includes a memory controller configured to disable at least one of the static cache and the dynamic cache based on a workload of the hybrid cache relative to a Total Bytes Written (TBW) Spec for the memory device. The cache may be disabled based on, for example, program/erase (PE) cycles of one or more portions of the memory device or the workload exceeding a threshold, which may define one or more switch points. A method of operating a memory device may include writing data in the static cache if the static cache is available, and writing the data in the dynamic cache if the static cache is unavailable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.