Atomic layer deposition and etch in a single plasma chamber for critical dimension control
US11211253B2 · kind B2 · utility
5Cited by
15References
18Claims
0Family size
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Key dates
| Filing date | Jun 25, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Jun 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.