Semiconductor device including a passivation structure and manufacturing method

US11211303B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jens Peter Konrath · Villach, AT
• Jochen Hilsenbeck · Villach, AT
• Dethard Peters · Edenkoben, DE
• Paul Salmen · Ense, DE
• Tobias Schmidutz · Munich, DE
• Vice Sodan · Villach, AT
• Christian Stahlhut · Rinteln, DE
• Juergen Steinbrenner · Zistersdorf, AT
• Bernd Zippelius · Erlangen, DE

Key dates

• Filing date: Dec 3, 2019
• Grant date: Dec 28, 2021
• Expiry date: Dec 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.