Power semiconductor package and method for fabricating a power semiconductor package
US11211356B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Aug 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/8492
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor package includes a power semiconductor chip, an electrical connector arranged at a first side of the power semiconductor chip and having a first surface that is coupled to a power electrode of the power semiconductor chip, an encapsulation body at least partially encapsulating the power semiconductor chip and the electrical connector, and an electrical insulation layer arranged at a second surface of the electrical connector opposite the first surface, wherein parts of the encapsulation body and the electrical insulation layer form a coplanar surface of the power semiconductor package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.