Patent · US Active

Power semiconductor package and method for fabricating a power semiconductor package

US11211356B2 · kind B2 · utility

0Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 12, 2020
Grant dateDec 28, 2021
Priority date
Expiry dateAug 12, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/8492
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power semiconductor package includes a power semiconductor chip, an electrical connector arranged at a first side of the power semiconductor chip and having a first surface that is coupled to a power electrode of the power semiconductor chip, an encapsulation body at least partially encapsulating the power semiconductor chip and the electrical connector, and an electrical insulation layer arranged at a second surface of the electrical connector opposite the first surface, wherein parts of the encapsulation body and the electrical insulation layer form a coplanar surface of the power semiconductor package.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.