Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
US11211537B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Apr 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.