Method of depositing a SiN film
US11217442B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 25, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a SiN film onto a flexible substrate includes providing the flexible substrate, and depositing the SiN film onto the flexible substrate in a plasma enhanced chemical vapour deposition (PECVD) process using SiH4, N2 and H2, in which the temperature of the substrate is 200° C. or less and SiH4 is introduced into the PECVD process at a flow rate of greater than 100 sccm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.