Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
US11217532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jul 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures extending through the alternating stack. Each of the electrically conductive layers includes a stack of a compositionally graded diffusion barrier and a metal fill material portion, and the compositionally graded diffusion barrier includes a substantially amorphous region contacting the interface between the compositionally graded diffusion barrier and a substantially crystalline region that is spaced from the interface by the amorphous region. The substantially crystalline region effectively blocks atomic diffusion, and the amorphous region induces formation of large grains during deposition of the metal fill material portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.