Inventor · Nagoya, JP

Yusuke Mukae

11Patents

3h-index

25Co-inventors

49Inventor score

Filing activity: Jun 7, 2018 → Mar 22, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US10608010B2	Three-dimensional memory device containing replacement contact via structures and method of making the same	Electricity	23	Active
US10615123B2	Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same	Electricity	10	Active
US10916504B2	Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners	Electricity	4	Active
US11217532B2	Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same	Electricity	3	Active
US11289416B2	Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers	Electricity	2	Active
US11894298B2	Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers	Electricity	1	Active
US12101936B2	Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement	Electricity	0	Active
US12029037B2	Three-dimensional memory device with discrete charge storage elements and methods for forming the same	Electricity	0	Active
US12185540B2	Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement	Electricity	0	Active
US12414296B2	Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement	Electricity	0	Active
US11377733B2	Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same	Chemistry; Metallurgy	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.