Backside power rail and methods of forming the same
US11222892B2 · kind B2 · utility
10Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2020 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Jun 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.