Large aluminum nitride crystals with reduced defects and methods of making them
US11225731B2 · kind B2 · utility
1Cited by
4References
16Claims
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Key dates
| Filing date | Feb 8, 2017 |
| Grant date | Jan 18, 2022 |
| Priority date | — |
| Expiry date | Jun 20, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.