Patent · US Active

Gas separation control in spatial atomic layer deposition

US11230763B2 · kind B2 · utility

1Cited by

2References

14Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Ning Li · White Plains, US
Steven Marcus · Tempe, US
Tai T. Ngo · Dublin, US
Kevin Griffin · Livermore, US

Key dates

Filing date	Jan 16, 2020
Grant date	Jan 25, 2022
Priority date	—
Expiry date	Jan 16, 2040

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/45557
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.