Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon
US11233047B2 · kind B2 · utility
1Cited by
46References
23Claims
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Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Dec 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.