Semiconductor power device and method for manufacture
US11233158B2 · kind B2 · utility
0Cited by
0References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 29, 2019 |
| Grant date | Jan 25, 2022 |
| Priority date | — |
| Expiry date | Dec 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
Abstract
A device includes a first doped semiconductor region and a second oppositely doped semiconductor region that are separated by an undoped or lightly-doped semiconductor drift region. The device further includes a first electrode structure making an ohmic contact with the first doped semiconductor region, and a second electrode structure making a universal contact with the second doped semiconductor region. The universal contact of the second electrode structure allows flow of both electrons and holes into, and out of, the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.