Inventor · Gilbert, AZ, US

Mingjiao Liu

26Patents
5h-index
22Co-inventors
65Inventor score

Filing activity: Sep 21, 2007 → Jul 17, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7579632B2 Multi-channel ESD device and method therefor Emerging Cross-Sectional Technologies 42 Active
US7538395B2 Method of forming low capacitance ESD device and structure therefor Emerging Cross-Sectional Technologies 23 Active
US7812367B2 Two terminal low capacitance multi-channel ESD device Emerging Cross-Sectional Technologies 13 Active
US7842969B2 Low clamp voltage ESD device and method therefor Electricity 13 Active
US8089095B2 Two terminal multi-channel ESD device and method therefor Emerging Cross-Sectional Technologies 10 Active
US8236625B2 Method of forming a multi-channel ESD device Emerging Cross-Sectional Technologies 5 Active
US7955941B2 Method of forming an integrated semiconductor device and structure therefor Electricity 5 Active
US8093133B2 Transient voltage suppressor and methods Electricity 4 Active
US8110448B2 Two terminal multi-channel ESD device and method therefor Emerging Cross-Sectional Technologies 3 Active
US8188572B2 Integrated semiconductor device Electricity 3 Active
US8039359B2 Method of forming low capacitance ESD device and structure therefor Emerging Cross-Sectional Technologies 3 Active
US10727326B2 Trench-gate insulated-gate bipolar transistors (IGBTs) Electricity 3 Active
US10177232B2 Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles Electricity 2 Active
US9818677B2 Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frame Electricity 2 Active
US9716151B2 Schottky device having conductive trenches and a multi-concentration doping profile therebetween Electricity 2 Active
US9972607B2 Semiconductor device and method of integrating power module with interposer and opposing substrates Electricity 2 Active
US10438932B2 Semiconductor device and method of integrating power module with interposer and opposing substrates Electricity 1 Active
US8339758B2 Transient voltage suppressor and method Electricity 1 Active
US11056581B2 Trench-gate insulated-gate bipolar transistors Electricity 1 Active
US9780019B2 Semiconductor component and method of manufacture Electricity 0 Active
US10163764B2 Semiconductor component and method of manufacture Electricity 0 Active
US11670706B2 Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs) Electricity 0 Active
US10388539B2 Semiconductor component and method of manufacture Electricity 0 Active
US11233158B2 Semiconductor power device and method for manufacture Electricity 0 Active
US10930524B2 Semiconductor component and method of manufacture Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.