Patent · US Active

Silicon carbide substrate and method of growing SiC single crystal boules

US11236438B2 · kind B2 · utility

1Cited by

4References

5Claims

0Family size

Assignee

SiCrystal GMBH · DE

Inventors

Michael Vogel · Nuremberg, DE
Bernhard Ecker · Nuremberg, DE
Ralf Müller · Geringswalde, DE
Matthias Stockmeier · Egloffstein, DE
Arnd-Dietrich Weber · Forchheim, DE

Key dates

Filing date	Mar 7, 2018
Grant date	Feb 1, 2022
Priority date	—
Expiry date	Jul 8, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B23/00
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm−3, preferably 1·1018 cm−3, from the mean concentration of this dopant in the peripheral region (104).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.