Patent · US Active

Terminal structure of a power semiconductor device

US11239188B2 · kind B2 · utility

1Cited by

10References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Zundel · Egmating, DE
Rainer Pelzer · Wernberg, AT
Manfred Schneegans · Vaterstetten, DE

Key dates

Filing date	Nov 20, 2017
Grant date	Feb 1, 2022
Priority date	—
Expiry date	Oct 19, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13091
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load current into and/or out of the semiconductor body. The load terminal includes a metallization having a frontside and a backside. The backside interfaces with a surface of the semiconductor body. The frontside is configured to interface with a wire structure having at least one wire configured to conduct at least a part of the load current. The frontside has a lateral structure formed at least by at least one local elevation of the metallization. The local elevation has a height in an extension direction defined by a distance between the base and top of the local elevation and, in a first lateral direction perpendicular to the extension direction, a base width at the base and a top width at the top.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.