Inventor · Wernberg, AT

Rainer Pelzer

11Patents

1h-index

30Co-inventors

46Inventor score

Filing activity: Dec 4, 2012 → Oct 1, 2020

Most-cited inventions

Patent	Title	Area	Cited by	Status
US10304782B2	Compressive interlayer having a defined crack-stop edge extension	Electricity	4	Active
US11239188B2	Terminal structure of a power semiconductor device	Electricity	1	Active
US8884407B2	Devices for providing an electrical connection	Electricity	0	Active
US11276624B2	Semiconductor device power metallization layer with stress-relieving heat sink structure	Electricity	0	Active
US11031321B2	Semiconductor device having a die pad with a dam-like configuration	Electricity	0	Active
US10978395B2	Method of manufacturing a semiconductor device having a power metallization structure	Electricity	0	Active
US10700019B2	Semiconductor device with compressive interlayer	Electricity	0	Active
US11488921B2	Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnect	Electricity	0	Active
US11127693B2	Barrier for power metallization in semiconductor devices	Electricity	0	Active
US10658309B2	Semiconductor device with compressive interlayer	General	0	Revoked
US10734320B2	Power metallization structure for semiconductor devices	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.