HEMT and method of adjusting electron density of 2DEG
US11239327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Sep 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer, wherein the aluminum gallium nitride layer comprises a tensile stress. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer between the source electrode and the drain electrode. At least one silicon oxide layer is embedded in the aluminum gallium nitride layer, wherein the silicon oxide layer is formed by a flowable chemical vapor deposition, and the silicon oxide layer increases the tensile stress in the aluminum gallium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.