Transistors with an asymmetrical source and drain

US11239366B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Wenjun Li · Beijing, CN
• Man Gu · Malta, US
• Baofu Zhu · Clifton Park, US

Key dates

• Filing date: Jan 30, 2020
• Grant date: Feb 1, 2022
• Expiry date: Jan 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure extends over a semiconductor body, a first source/drain region includes an epitaxial semiconductor layer on a first portion of the semiconductor body, and a second source/drain region is positioned in a second portion of the semiconductor body. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure. The first source/drain region has a first width, and the second source/drain region has a second width that is greater than the first width.