Tungsten structures and methods of forming the structures
US11244903B2 · kind B2 · utility
3Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Jan 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.