Transition metal dichalcogenide based magnetoelectric memory device

US11245068B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Chia-Ching Lin · Daxi District, TW
• Sasikanth Manipatruni · Ithaca, US
• Tanay Gosavi · Portland, US
• Dmitri E. Nikonov · معلمی نژاد, US
• Benjamin Buford · Hillsboro, US
• Kaan Oguz · Beaverton, US
• John J. Plombon · Portland, US
• Ian A. Young · Portland, US

Key dates

• Filing date: Jun 14, 2018
• Grant date: Feb 8, 2022
• Expiry date: May 13, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO3, (LaBi)FeO3, LuFeO3, PMN-PT, PZT, AlN, SmBiFeO3, Cr2O3, etc.) material and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, graphene, etc.); a magnet adjacent to a first portion of the TMD of the stack; a first interconnect adjacent to the magnet; a second interconnect adjacent to the ME material of the stack; and a third interconnect adjacent to a second portion of the TMD of the stack.