Segmented stress decoupling via frontside trenching

US11247895B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Florian BRANDL · Maxhütte-Haidhof, DE
• Robert Gruenberger · Nandlstadt, DE
• Wolfram Langheinrich · Dresden, DE

Key dates

• Filing date: Jul 15, 2020
• Grant date: Feb 15, 2022
• Expiry date: Jul 15, 2040

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0714
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.