DRAM with inter-section, page-data-copy scheme for low power and wide data access
US11250904B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/107
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Voltages loaded onto the bit lines in a first CA section of a memory array can be latched by enabling the BLSA between the first section and a second section adjacent to the first section causing latched voltages to propagate to bit lines in the second section. Voltages propagated to the bit lines in the second section using the latches between the second section and a third section. Voltages can be propagated sequentially from section to subsequent adjacent section until a target location is reached. The scheme can be applied as a method of page-data write access in a memory chip, of which page data can be propagated sequentially from section to subsequent adjacent section until a target location is reached, and then, activating a word line in a section of the memory comprising the target location to write voltages to the memory cells at the target location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.