Patent · US Active

Semiconductor devices having a non-galvanic connection

US11251146B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Walter Hartner · Munich, DE
Francesca Arcioni · Munich, DE
Birgit Hebler · Aue, DE
Martin Richard Niessner · Munich, DE
Claus Waechter · Sinzing, DE
Maciej Wojnowski · Munich, DE

Key dates

Filing date	Apr 6, 2020
Grant date	Feb 15, 2022
Priority date	—
Expiry date	Aug 14, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/81399
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.