Monolithic chip stacking using a die with double-sided interconnect layers
US11251158B2 · kind B2 · utility
2Cited by
0References
18Claims
0Family size
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Key dates
| Filing date | Sep 25, 2017 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Oct 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided which comprises: a first die having a first surface and a second surface, the first die comprising: a first layer formed on the first surface of the first die, and a second layer formed on the second surface of the first die; a second die coupled to the first layer; and a plurality of structures to couple the apparatus to an external component, wherein the plurality of structures is coupled to the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.