Power semiconductor device and method of processing a power semiconductor device

US11251266B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Philip Christoph Brandt · Oberhaching, DE
• Manfred Pfaffenlehner · Birkenfeld, DE
• Frank Pfirsch · Birkenfeld, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Steffen Schmidt · Dresden, DE
• Frank Umbach · Munich, DE

Key dates

• Filing date: Feb 14, 2020
• Grant date: Feb 15, 2022
• Expiry date: Aug 7, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/411
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.