Power semiconductor device

US11251298B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventors

• Yasuhiro Isobe · Kyoto, JP
• Hung Hung · Yokohama, JP
• Masaaki Onomura · Tokyo, JP

Key dates

• Filing date: Feb 25, 2020
• Grant date: Feb 15, 2022
• Expiry date: Feb 25, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor device of an embodiment includes: a first nitride semiconductor layer of a first conductive type; a second nitride semiconductor layer which is the first conductive type and is provided on the first nitride semiconductor layer; a third nitride semiconductor layer which is a second conductive type and is provided on the second nitride semiconductor layer; a fourth nitride semiconductor layer which is the first conductive type and is provided on the third nitride semiconductor layer; and a first electrode provided in a trench provided in the second nitride semiconductor layer, the third nitride semiconductor layer, and the fourth nitride semiconductor layer, via a first insulating film.