Patent · US Active

Engineered substrate with embedded mirror

US11251321B2 · kind B2 · utility

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2References
20Claims
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Key dates

Filing dateJan 27, 2017
Grant dateFeb 15, 2022
Priority date
Expiry dateJan 16, 2039

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/544
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.