High blocking temperature spin orbit torque electrode

US11251365B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Tanay Gosavi · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Kaan Oguz · Beaverton, US
• Ian A. Young · Portland, US
• Kevin P. O'Brien · Cincinnati, US
• Gary Allen · Portland, US
• Noriyuki Sato · Hillsboro, US

Key dates

• Filing date: Mar 30, 2018
• Grant date: Feb 15, 2022
• Expiry date: May 17, 2040

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y25/00
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.