Annular member, plasma processing apparatus and plasma etching method
US11257662B2 · kind B2 · utility
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1References
8Claims
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Key dates
| Filing date | Aug 20, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Aug 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.