RRAM structure with only part of variable resistive layer covering bottom electrode and method of fabricating the same

US11257864B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Wen-Jen Wang · Tainan, TW
• Chun-Hung Cheng
• Chuan-Fu Wang · Banluliao, TW

Key dates

• Filing date: Feb 18, 2020
• Grant date: Feb 22, 2022
• Expiry date: Feb 18, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

An RRAM structure includes a substrate. The substrate is divided into a memory cell region and a logic device region. A metal plug is disposed within the memory cell region. An RRAM is disposed on and contacts the metal plug. The RRAM includes a top electrode, a variable resistive layer, and a bottom electrode. The variable resistive layer is disposed between the top electrode and the bottom electrode. The variable resistive layer includes a first bottom surface. The bottom electrode includes a first top surface. The first bottom surface and the first top surface are coplanar. The first bottom surface only overlaps and contacts part of the first top surface.