Chuan-Fu Wang
70Patents
8h-index
49Co-inventors
78Inventor score
Filing activity: Aug 14, 1997 → Nov 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6274444A | Method for forming mosfet | Electricity | 138 | Expired |
| US6054394A | Method of fabricating a dynamic random access memory capacitor | Electricity | 25 | Expired |
| US5913129A | Method of fabricating a capacitor structure for a dynamic random access memory | Electricity | 17 | Expired |
| US6140201A | Method for fabricating a cylinder capacitor | Electricity | 14 | Expired |
| US5879987A | Method of fabricating dynamic random access memory having a stacked capacitor | Electricity | 11 | Expired |
| US6211021A | Method for forming a borderless contact | Electricity | 11 | Expired |
| US6080621A | Method of manufacturing dynamic random access memory | Electricity | 10 | Expired |
| US6277685A | Method of forming a node contact hole on a semiconductor wafer | Electricity | 8 | Expired |
| US6251725A | Method of fabricating a DRAM storage node on a semiconductor wafer | Electricity | 6 | Expired |
| US6087216A | Method of manufacturing DRAM capacitor | Electricity | 6 | Expired |
| US6117757A | Method of forming landing pads for bit line and node contact | Electricity | 5 | Expired |
| US6204117A | Removal of silicon oxynitride on a capacitor electrode for selective hemispherical grain growth | Electricity | 5 | Expired |
| US6107132A | Method of manufacturing a DRAM capacitor | Electricity | 5 | Expired |
| US6162670A | Method of fabricating a data-storage capacitor for a dynamic random-access memory device | Electricity | 4 | Expired |
| US6171924A | Method of fabricating a dynamic random access memory capacitor | Electricity | 4 | Expired |
| US6197630A | Method of fabricating a narrow bit line structure | Electricity | 3 | Expired |
| US11257864B2 | RRAM structure with only part of variable resistive layer covering bottom electrode and method of fabricating the same | Electricity | 3 | Active |
| US8413401B2 | Modular door case for bathing enclosure | Human Necessities | 3 | Active |
| US6074911A | Method of fabricating dual cylindrical capacitor | Electricity | 2 | Expired |
| US6511891B2 | Method of preventing toppling of lower electrode through flush cleaning | Electricity | 2 | Expired |
| US7193265B2 | Single-poly EEPROM | Physics | 2 | Expired |
| US6080619A | Method for manufacturing DRAM capacitor | Electricity | 2 | Expired |
| US6329291A | Method of forming a lower storage node of a capacitor for dynamic random access memory | Electricity | 2 | Expired |
| US11400835B2 | Power slide | Mechanical Engineering; Lighting; Heating | 1 | Active |
| US12041863B2 | Resistive random access memory (RRAM) structure and forming method thereof | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.