Electronic device having multi-thickness gate insulator
US11257916B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Jun 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section including a first thickness, and a second gate insulator section including a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.