Inventor · Gilbert, AZ, US

Prasad Venkatraman

91Patents
9h-index
44Co-inventors
78Inventor score

Filing activity: Jun 8, 1992 → Dec 8, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US5897343A Method of making a power switching trench MOSFET having aligned source regions Electricity 84 Expired
US6818946B1 Trench MOSFET with increased channel density Emerging Cross-Sectional Technologies 25 Expired
US8415739B2 Semiconductor component and method of manufacture Electricity 20 Active
US6982193B2 Method of forming a super-junction semiconductor device Electricity 19 Expired
US8034685B1 Semiconductor component and method of manufacture Electricity 16 Active
US8466513B2 Semiconductor device with enhanced mobility and method Electricity 15 Active
US5446310A Integrated circuit power device with external disabling of defective devices and method of fabricating same Electricity 14 Expired
US7915672B2 Semiconductor device having trench shield electrode structure Electricity 12 Active
US6344379B1 Semiconductor device with an undulating base region and method therefor Electricity 10 Expired
US6987040B2 Trench MOSFET with increased channel density Emerging Cross-Sectional Technologies 9 Expired
US9159797B2 Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench Electricity 8 Active
US9048214B2 Bidirectional field effect transistor and method Electricity 8 Active
US8021947B2 Method of forming an insulated gate field effect transistor device having a shield electrode structure Electricity 8 Active
US7189608B2 Semiconductor device having reduced gate charge and reduced on resistance and method Electricity 7 Expired
US9029215B2 Method of making an insulated gate semiconductor device having a shield electrode structure Electricity 7 Active
US8723238B1 Method of forming a transistor and structure therefor Electricity 6 Active
US7767529B2 Semiconductor component and method of manufacture Electricity 5 Active
US8648412B1 Trench power field effect transistor device and method Electricity 5 Active
US9748224B2 Heterojunction semiconductor device having integrated clamping device Electricity 5 Active
US6870221B2 Power switching transistor with low drain to gate capacitance Electricity 4 Expired
US8304314B2 Method of forming an MOS transistor Electricity 4 Active
US9129889B2 High electron mobility semiconductor device and method therefor Electricity 4 Active
US8928050B2 Electronic device including a schottky contact Electricity 4 Active
US8889532B2 Method of making an insulated gate semiconductor device and structure Electricity 4 Active
US8362548B2 Contact structure for semiconductor device having trench shield electrode and method Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.