Group III HEMT and capacitor that share structural features
US11257940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2020 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Jan 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.